材料科学
铁电性
苯并噻吩
单层
场效应晶体管
极化(电化学)
矫顽力
薄膜
电场
基质(水族馆)
相(物质)
结晶学
晶体管
光电子学
凝聚态物理
纳米技术
电压
有机化学
物理化学
化学
物理
海洋学
量子力学
地质学
电介质
噻吩
作者
Kohei Sambe,Takashi Takeda,Norihisa Hoshino,Wakana Matsuda,Riku Miura,Kanae Tsujita,Shingo Maruyama,S. Yamamoto,Shu Seki,Yuji Matsumoto,Tomoyuki Akutagawa
标识
DOI:10.1021/acsami.3c14476
摘要
An alkylamide-substituted [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivative of BTBT-CONHC14H29 (1) and C8H17-BTBT-CONHC14H29 (2) were prepared to design the multifunctional organic materials, which can show both ferroelectric and semiconducting properties. Single-crystal X-ray structural analyses of short-chain (−CONHC3H7) derivatives revealed the coexistence of two-dimensional (2D) electronic band structures brought from a herringbone arrangement of the BTBT π core and the one-dimensional (1D) hydrogen-bonding chains of −CONHC3H7 chains. The thin films of 1 and 2 fabricated on the Si/SiO2 substrate surface have monolayer and bilayer structures, respectively, resulting in conducting layers parallel to the substrate surface, which is suitable for a channel layer of organic field-effect transistors (OFETs). The thin film of 1 indicated a hole mobility μFET = 2.4 × 10–5 cm2 V–1 s–1 and threshold voltage VTh = – 29 V, whereas that of 2 showed a μFET = 2.1 × 10–2 cm2 V–1 s–1 and threshold voltage VTh = −9.7 V. Both 1 and 2 formed the smectic E (SmE) phase above 410 and 369 K, respectively, where the existence of a hole transport pathway was confirmed in the SmE phase. The ferroelectric hysteresis behavior was observed in bulk 1 and 2 in the polarization–electric field (P–E) curves at the SmE phase. 1 showed the remanent polarization Pr = 2.3 μC cm–2 and coercive electric field Ec = 5.2 V μm–1, whereas the Pr and Ec of 2 were 3.4 μC cm–2 and 7.0 V μm–1 at the conditions of 453 K and 1 Hz. Introduction of alkylamide units into the BTBT π core has the potential to develop the external stimulus-responsive organic semiconductors brought from both ferroelectricity and semiconducting properties.
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