Strain Engineering for Modulating Electronic and Optoelectronic Properties of Monolayer InSe

This work provides valuable insights into the potential of strain engineering for tailoring the electronic and optoelectronic properties of monolayer InSe. The bandgap of monolayer InSe can be modified through strain engineering, where tensile strain leads to a decreased bandgap value and a potential transition from a semiconductor to a conductor, while compressive strain initially increases the bandgap to a maximum value before decreasing back to its original value. The findings suggest that mechanical deformation can effectively modify InSe's electronic structure, providing a promising avenue for developing high-performance optoelectronic devices with tunable properties. Furthermore, this work proved strain engineering can effectively modify the optoelectronic properties of monolayer InSe, such as absorption coefficient, reflectivity, conductivity, and loss function. Specifically, compressive strain can significantly increase the peak value of these properties, while tensile strain can increase their average value in the visible light and infrared range. These results demonstrate the importance of considering strain effects when designing next-generation 2D-based devices and highlight InSe as a promising candidate for the optoelectronic devices.