A comprehensive simulation study of multi-junction solar cell

Abstract This study conducts comprehensive simulation analysis of typical triple-junction solar cells using Silvaco ATLAS. Initially, modeling and simulation of the typical triple-junction solar cells under the AM1.5 solar spectrum at 300 K are performed to characterize various performance parameters of the cells under one sun illumination. Subsequently, the impact of the thickness of the top and middle cell layers on the efficiency of the cells is analyzed. Additionally, the influence of doping concentration errors in individual sub-cells on the overall power deviation of the cells is investigated. Moreover, Al 0.9 Ga 0.1 As is employed to replace AlInP as the top FSF (Front Surface Field). Furthermore, the study analyzes the variation of internal radiation efficiency of the top and middle sub-cells of the solar cells with concentration factor and bias voltage. Finally, an assessment is made on the effects of different positions and densities of interface defects, as well as the introduction of class-acceptor Gaussian distribution state levels induced by defects, on the performance of the solar cells. The results indicate that this study provides valuable insights for optimizing multi-junction solar cells and analyzing internal physical phenomena.