InAs nanowire arrays for room-temperature ultra-broadband infrared photodetection

at a wavelength of 1600 nm, a bias voltage of only -0.1 V and a relatively high operating temperature of 150 K. Such a strong light trapping effect in the InAs nanowires also leads to significantly lower reflection compared to that observed in planar photodetectors, and thus strong absorption in the substrate extending the photoresponse up to the InAs bandgap edge of 3500 nm. Our work shows that through careful material optimisation and device design, InAs nanowire arrays are promising for the development of high-performance ultra-broadband infrared photodetectors for wavelengths ranging from NIR, SWIR to MWIR.