铁电性
材料科学
范德瓦尔斯力
纳米技术
小型化
数码产品
极化(电化学)
纳米
堆积
工程物理
光电子学
电气工程
物理
电介质
工程类
化学
量子力学
物理化学
复合材料
核磁共振
分子
作者
Shiyao Lin,G. Q. Zhang,Qinglin Lai,Jun Fu,Wenguang Zhu,Hualing Zeng
标识
DOI:10.1002/adfm.202304139
摘要
Abstract With the advent of the post Moore era, modern electronics require further device miniaturization of all electronic components, particularly ferroelectric memories, due to the need for massive data storage. This demand stimulates the exploration of robust switchable ferroelectric polarizations at the atomic scale. In this scenario, van der Waals ferroelectrics have recently gained increasing attention because of their stable layered structure at nanometer thickness, offering the opportunity to realize two‐dimensional ferroelectricity that is long‐sought in conventional thin film ferroelectrics. In this review, recent advancements are summarized in layered ferroelectrics with highlights of the fundamentals of intrinsic two‐dimensional ferroelectricity, the emergence of artificial stacking ferroelectricity, and related protype devices with exotic functions. In addition, the unique polarization control in van der Waals ferroelectrics is discussed. Although great challenges remain unsolved, these studies undoubtedly advance the integration of 2D ferroelectrics in electronics.
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