Highly Responsive Dual-Function Deep-Ultraviolet Neuromorphic Phototransistors Based on Silicon Carbide Nanoparticle/2D MoS2 Heterostructures

神经形态工程学 材料科学 异质结 紫外线 碳化硅 光电子学 纳米技术 双重功能 纳米颗粒 功能(生物学) 对偶(语法数字) 人工神经网络 计算机科学 复合材料 计算机图形学(图像) 文学类 艺术 机器学习 生物 进化生物学 轮廓
作者
Zhentao Lian,Jianyong Wei,Yuzhuo Liu,Zuheng Liu,Yumeng Liu,Maosong Xie,Yaping Dan,Chang‐Ching Tu,Rui Yang
出处
期刊:ACS Nano [American Chemical Society]
卷期号:19 (28): 26041-26054 被引量:7
标识
DOI:10.1021/acsnano.5c06692
摘要

Two-dimensional (2D) semiconductors have been of great interest for phototransistors and neuromorphic devices in recent years because of their unique optical and electronic properties. However, the detectable spectral range and light absorption efficiency are limited for 2D-semiconductor-based phototransistors. Herein, we report a high-performance deep-ultraviolet (DUV) sensitive phototransistor by integrating molybdenum disulfide (MoS2) with silicon carbide nanoparticles (SiC NPs) to form a van der Waals heterostructure (vdWH), which shows ultrahigh responsivity and detectivity, especially in the DUV spectral range. The SiC NPs/few-layer MoS2 vdWH phototransistor shows a 20-fold enhancement in responsivity (from 9.4 × 102 to 1.9 × 104 A/W) and 11-fold enhancement in detectivity (from 7.9 × 1012 to 8.4 × 1013 cm × Hz1/2/W) at 254 nm wavelength, compared to the phototransistor based on few-layer MoS2 alone. Moreover, the SiC NPs/few-layer MoS2 vdWH phototransistor also shows higher excitation postsynaptic current (EPSC) and longer retention time of postsynaptic current (PSC) compared to the phototransistor based on few-layer MoS2 alone. This enables vdWH devices to successfully mimic various biological synaptic functions, including paired-pulse facilitation (PPF), spike-duration-dependent plasticity, spike-number-dependent plasticity, spike-frequency-dependent plasticity, the transition from short-term plasticity (STP) to long-term plasticity (LTP), and long-term depression (LTD) capabilities. The simulation of a deep neural network (DNN) shows that the image inference accuracy based on these SiC NPs/few-layer MoS2 vdWH neuromorphic phototransistors reaches up to 98.99% even after considering the photoresponsivity variations. The high-performance dual-function neuromorphic optoelectronics based on SiC NPs/MoS2 vdWH hold great promise for ultrasensitive DUV photodetection, neuromorphic DUV visual sensing, and in-sensor computing applications in a single device.
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