Interaction Energy Dependency on Pulse Width in ns NIR Laser Scanning of Silicon

材料科学 脉搏(音乐) 脉冲宽度调制 通量 脉冲持续时间 光学 半最大全宽 烧蚀 激光器 激光烧蚀 光电子学 功率(物理) 物理 航空航天工程 工程类 探测器 量子力学
作者
Shunping Li,Xinchang Wang,Guojie Chen,Zhongke Wang
出处
期刊:Micromachines [MDPI AG]
卷期号:14 (1): 119-119
标识
DOI:10.3390/mi14010119
摘要

Laser ablation of semiconductor silicon has been extensively studied in the past few decades. In the ultrashort pulse domain, whether in the fs scale or ps scale, the pulse energy fluence threshold in the ablation of silicon is strongly dependent on the pulse width. However, in the ns pulse scale, the energy fluence threshold dependence on the pulse width is not well understood. This study elucidates the interaction energy dependency on pulse width in ns NIR laser ablation of silicon. The level of ablation or melting was determined by the pulse energy deposition rate, which was proportional to laser peak power. Shorter pulse widths with high peak power were likely to induce surface ablation, while longer pulse widths were likely to induce surface melting. The ablation threshold increased from 5.63 to 24.84 J/cm2 as the pulse width increased from 26 to 500 ns. The melting threshold increased from 3.33 to 5.76 J/cm2 as the pulse width increased from 26 to 200 ns, and then remained constant until 500 ns, the longest width investigated. Distinct from a shorter pulse width, a longer pulse width did not require a higher power level for inducing surface melting, as surface melting can be induced at a lower power with the longer heating time of a longer pulse width. The line width from surface melting was less than the focused spot size; the line appeared either as a continuous line at slow scanning speed or as isolated dots at high scanning speed. In contrast, the line width from ablation significantly exceeded the focused spot size.
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