Bimodal Reconfigurable Memristor and Read-Only Operations Coexisting in HfOx-Based Stacked Structures

In this work, bilayer self-rectified memristors for highly scalable memory arrays have been realized in bilayer stacked structures for suppressing the sneak path current without an additional switch device integration. This is a groundbreaking development for high-density storage memory applications. The programmable reconfigurations and operational polarities on self-rectified memristor with temperature response on dielectric fusing phenomena with the impact of electrode thermal conductivity have been investigated. The nonlinear bifunctional memristor with low voltage dielectric fusing operation is also presented for reprogrammable read-only memory applications as the future features for security in artificial intelligence and internet hardware systems.