Review of HTRB and HTGB Reliability of SiC MOSFETs

A comprehensive review of High-Temperature Gate Bias (HTGB) and High-Temperature Reverse Bias (HTRB) reliability in Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) was made in this paper. Despite the considerable potential of high power, high voltage, high frequency, and radiation resistance for SiC MOSFETs, the challenge in long-term reliability has limited the application in high-frequency and high-temperature fields. As an effective method to assess long-term reliability of SiC MOSFETs, HTGB and HTRB testing have been widely applied for commercial SiC MOSFETs. The research on the reliability of SiC MOSFETs under HTGB and HTRB has been comprehensively reviewed in this paper, with a focus on the test conditions, deterioration laws of key parameters, and failure mechanisms. This review may serve as a valuable reference for subsequent research on SiC MOSFETs.