A proposal for skyrmion-based diode-like device in antiferromagnetic nanostripe

Abstract Micromagnetic simulations were employed to investigate the dynamics of a single skyrmion within an antiferromagnetic nanostripe with spatially engineered magnetic properties. This study investigates skyrmion motion within an antiferromagnetic nanostripe engineered with trapezoidal regions of enhanced magnetic anisotropy, enabling diode-like functionality by selectively directing skyrmion movement. Our findings demonstrate that skyrmions can cross these barriers in one direction while being obstructed in the reverse direction, mimicking diode behavior. A detailed analysis is presented on how geometric parameters, such as the inclination angle of the trapezoidal barriers, impact skyrmion motion and device efficacy. Additionally, we reveal that an optimal combination of current density and anisotropy is essential to facilitate efficient skyrmion transport through the nanostripe without reverse movement or annihilation. This work advances the development of skyrmion-based devices for spintronic applications. It provides valuable insights into designing structures that harness controlled topological dynamics.