Materials and possible mechanisms of extremely large magnetoresistance: a review

磁电阻 磁场 凝聚态物理 领域(数学) 散射 物理 拓扑(电路) 材料科学 数学 量子力学 组合数学 纯数学 光学
作者
Rui Niu,Wenka Zhu
出处
期刊:Journal of Physics: Condensed Matter [IOP Publishing]
卷期号:34 (11): 113001-113001 被引量:45
标识
DOI:10.1088/1361-648x/ac3b24
摘要

Abstract Magnetoresistance (MR) is a characteristic that the resistance of a substance changes with the external magnetic field, reflecting various physical origins and microstructures of the substance. A large MR, namely a huge response to a low external field, has always been a useful functional feature in industrial technology and a core goal pursued by physicists and materials scientists. Conventional large MR materials are mainly manganites, whose colossal MR (CMR) can be as high as −90%. The dominant mechanism is attributed to spin configuration aligned by the external field, which reduces magnetic scattering and thus resistance. In recent years, some new systems have shown an extremely large unsaturated MR (XMR). Unlike ordinary metals, the positive MR of these systems can reach 10 3 %–10 8 % and is persistent under super high magnetic fields. The XMR materials are mainly metals or semimetals, distributed in high-mobility topological or non-topological systems, and some are magnetic, which suggests a wide range of application scenarios. Various mechanisms have been proposed for the potential physical origin of XMR, including electron–hole compensation, steep band, ultrahigh mobility, high residual resistance ratio, topological fermions, etc. It turns out that some mechanisms play a leading role in certain systems, while more are far from clearly defined. In addition, the researches on XMR are largely overlapped or closely correlated with other recently rising physics and materials researches, such as topological matters and two-dimensional (2D) materials, which makes elucidating the mechanism of XMR even more important. Moreover, the disclosed novel properties will lay a broad and solid foundation for the design and development of functional devices. In this review, we will discuss several aspects in the following order: (I) introduction, (II) XMR materials and classification, (III) proposed mechanisms for XMR, (IV) correlation with other systems (featured), and (V) conclusions and outlook.
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