Lv3
282 积分 2026-04-15 加入
Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
2小时前
已完结
Enhancement-Mode $\beta$ -Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker
2小时前
已完结
Molecular beam epitaxy of ferroelectric ScAlN on β -Ga2O3 substrates
18天前
已完结
Comprehensive Study of Normally-off ScAlN Barrier GaN Transistors on Ultra-wide Bandgap β-Ga2O3: DC and RF Perspectives
18天前
已完结
On the exceptional temperature stability of ferroelectric Al1-xScxN thin films
26天前
已完结
Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films
27天前
已完结
A statistical study on the origin of the polarization-dependent leakage in ferroelectric aluminum scandium nitride films
27天前
已关闭
Design and Performance Investigation of a Dual p-GaN Recessed Gate High Electron Mobility Transistors for High Threshold Voltage Applications
29天前
已关闭
Analytical Modeling and Extraction of Small Signal Model Parameters of Cylindrical Gate Stack ( HfO 2 ) Silicon‐On‐Insulator Schottky Barrier MOSFET for High Frequency Circuits
29天前
已关闭
Evolution of polarization switching kinetics in an Al0.8Sc0.2N ferroelectric film with electric field cycling
1个月前
已完结
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