Lv1
36 积分 2025-11-21 加入
Role of entropy in silicon carbide polytype competition
30天前
已完结
Dislocation glide motion in 6H SiC single crystals subjected to high-temperature deformation
1个月前
已完结
Impurities and defects in 4H silicon carbide
1个月前
已完结
Effect of dopants and surface oxides on the electronic properties of dislocations in p-type SiC
2个月前
已完结
Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density
2个月前
已完结
XRD Characterization of the 6H-SiC Single Crystal Grown from Si-C-Ti Ternary Solution
3个月前
已完结
Machine learning assisted calibration of PVT simulations for SiC crystal growth
5个月前
已完结
Suppressing Stress and Defect Clustering in 8-inch PVT-Grown 4H-SiC Crystals via High-Temperature Post-Growth Annealing
5个月前
已关闭