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304 积分 2025-11-21 加入
Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC
1天前
待确认
Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
1天前
已完结
Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography
27天前
已完结
Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production
1个月前
已完结
Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
1个月前
已完结
Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography
1个月前
已完结
Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals
1个月前
已完结
Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers
1个月前
已完结
Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth
1个月前
已完结
Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes
1个月前
已完结
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