Lv42
476 积分 2025-11-21 加入
Stacking fault energy of 6H-SiC and 4H-SiC single crystals
9小时前
待确认
Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals
1天前
待确认
Eddy‐Current Resistivity Mapping of Low‐Resistivity n‐Type 4H–SiC: Accuracy, Repeatability, and Application Relevance
11天前
已完结
Influence of Temperature on Polytype Stability of Silicon Carbide with Dopants: A First-Principles Investigation
16天前
已完结
Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a
1个月前
已完结
Radiation Resistance of SiC Detectors after Neutron Irradiation
1个月前
已完结
Physical Vapor Transport Growth of 4H-SiC on {000-1} Vicinal Surfaces
1个月前
已完结
Role of entropy in silicon carbide polytype competition
2个月前
已完结
Dislocation glide motion in 6H SiC single crystals subjected to high-temperature deformation
3个月前
已完结
Impurities and defects in 4H silicon carbide
3个月前
已完结
皖公网安备34019202002308
