| 标题 |
Structural characterization of the growth front of physical vapor transport grown 4H-SiC crystals using X-ray topography |
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| DOI | |
| 其它 |
期刊:Journal of Crystal Growth 作者:Masashi Sonoda; T. Nakano; Kentaro Shioura; N. Shinagawa; N. Ohtani 出版日期:2018-10-01 |
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(2025-6-4)