Lv11
88 积分 2025-05-19 加入
Device Design Direction of CSTBT for Low Loss and EMI Noise
3小时前
已完结
Study on False Turn-On in IGBT With Floating p-Well and Comparing With Improved Structures
21天前
已完结
Study of the electrostatic potential of the floating-p region during the turn-on period of IGBT
1个月前
已完结
Characterization and performance comparison of the power DIMOS structure fabricated with a reduced thermal budget in 4H and 6H-SiC
3个月前
已完结
Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD)
6个月前
已完结
Failure Analysis and Reliability Improvement of the Corner Region of Variation Lateral Doping Termination
6个月前
已完结
Optimal impurity distribution model and experimental verification of variation of lateral doping termination
6个月前
已完结
3D Wide-Area TCAD Approach to Address Avalanche Breakdown in IGBT Edge Termination
6个月前
已完结
Device Design Direction of CSTBT for Low Loss and EMI Noise
6个月前
已完结
3D Wide-Area TCAD Approach to Address Avalanche Breakdown in IGBT Edge Termination
7个月前
已完结
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