Lv1
88 积分 2025-05-19 加入
Trench-Gate Bipolar Transistor With Partially Buried Carrier Storage Layer for Enhanced Blocking and Switching Characteristics
1个月前
已完结
A floating dummy IGBT with a polysilicon P-N junction gate for EMI suppression
1个月前
已关闭
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect
1个月前
已完结
A novel P/N-drift reverse-conducting IGBT with P-layer structure at the trench bottom
1个月前
已完结
Numerical Analysis of an Ultralow Switching Loss IGBT With an Inner Primary Blocking Junction
1个月前
已完结
Carrier-storage floating p-region IGBT for EMI suppression
2个月前
已完结
Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability
2个月前
已完结
Device Design Direction of CSTBT for Low Loss and EMI Noise
3个月前
已完结
Study on False Turn-On in IGBT With Floating p-Well and Comparing With Improved Structures
3个月前
已完结
Study of the electrostatic potential of the floating-p region during the turn-on period of IGBT
4个月前
已完结
皖公网安备34019202002308
