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88 积分 2025-05-19 加入
Characterization and performance comparison of the power DIMOS structure fabricated with a reduced thermal budget in 4H and 6H-SiC
1个月前
已完结
Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD)
4个月前
已完结
Failure Analysis and Reliability Improvement of the Corner Region of Variation Lateral Doping Termination
4个月前
已完结
Optimal impurity distribution model and experimental verification of variation of lateral doping termination
4个月前
已完结
3D Wide-Area TCAD Approach to Address Avalanche Breakdown in IGBT Edge Termination
4个月前
已完结
Device Design Direction of CSTBT for Low Loss and EMI Noise
4个月前
已完结
3D Wide-Area TCAD Approach to Address Avalanche Breakdown in IGBT Edge Termination
5个月前
已完结
Investigation of the Gate Voltage Overshoot of IGBTs Under Short Circuit Type II Condition
8个月前
已完结
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