Lv11
88 积分 2025-05-19 加入
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect
3小时前
已完结
A novel P/N-drift reverse-conducting IGBT with P-layer structure at the trench bottom
9小时前
已完结
Numerical Analysis of an Ultralow Switching Loss IGBT With an Inner Primary Blocking Junction
13天前
已完结
Carrier-storage floating p-region IGBT for EMI suppression
14天前
已完结
Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability
1个月前
已完结
Device Design Direction of CSTBT for Low Loss and EMI Noise
1个月前
已完结
Study on False Turn-On in IGBT With Floating p-Well and Comparing With Improved Structures
2个月前
已完结
Study of the electrostatic potential of the floating-p region during the turn-on period of IGBT
2个月前
已完结
Characterization and performance comparison of the power DIMOS structure fabricated with a reduced thermal budget in 4H and 6H-SiC
5个月前
已完结
Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD)
7个月前
已完结
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