Lv41
630 积分 2026-03-20 加入
STI PULL-DOWN TO CONTROL SiGe FACET GROWTH
2个月前
已关闭
Very low temperature (450 °C) selective epitaxial growth of heavilyin situboron-doped SiGe layers
3个月前
已完结
A study of Boron Concentration Uniformity in Selective Epitaxial Growth for SiGe HBT
3个月前
已完结
Numerical Modeling of Gas-Phase Nucleation and Particle Growth during Chemical Vapor Deposition of Silicon
4个月前
已完结
Growth kinetic and doping of Si and SiGe epi layers on fullsheet substrates
4个月前
已完结
Investigation of In Situ Boron‐Doping in SiGe Source/Drain Layer Growth for PMOS Devices
4个月前
已完结
B incorporation in Ge(001) grown by gas-source molecular-beam epitaxy from Ge2H6 and B2H6
4个月前
已完结
Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers
4个月前
已完结
Investigation of Process Parameters on the Properties of Selective Epitaxial Growth SiGe Structure
4个月前
已完结
High boron incorporation in selective epitaxial growth of SiGe layers
5个月前
已完结
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