Lv11
10 积分 2024-09-10 加入
Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-SiC Transistors
1小时前
已完结
Carrier lifetime killer in 4H-SiC: carrier capture path via carbon vacancies
1小时前
已完结
Interface Properties of 4H-SiC (<inline-formula> <tex-math notation="LaTeX">$11\bar {2}0$ </tex-math></inline-formula>) and (<inline-formula> <tex-math notation="LaTeX">$1\bar {1}00$ </tex-math></inline-formula>) MOS Structures Annealed in NO
10天前
已完结
A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement
10天前
已完结
A cause for highly improved channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors on the (1120) face
10天前
已完结
Enhanced gate biasing resilience in asymmetric and double trench SiC MOSFETs towards generalized highly reliable power electronics
10天前
已完结
Effect of Gate-Oxide Degradation on Electrical Parameters of Silicon Carbide MOSFETs
12天前
已完结
Time-Dependent Degradation Mechanism of 1.2 kV SiC MOSFET Under Long-Term High-Temperature Gate Bias Stress
19天前
已完结
Time-Dependent Degradation Mechanism of 1.2 kV SiC MOSFET Under Long-Term High-Temperature Gate Bias Stress
20天前
已完结
Dipole engineering in self-assembled monolayers for efficient organic–silicon hybrid solar cells
1个月前
已完结
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