Lv3
310 积分 2022-03-29 加入
Enhanced TDDB-Reliability of Ultra-Thin Zirconia Capacitors Featuring Al-Doped Oxide Layers
1个月前
已完结
Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties
1个月前
已完结
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices
1个月前
已完结
Laminated Al2O3–HfO2 layers grown by atomic layer deposition for microelectronics applications
1个月前
已完结
Hf/Zr Superlattice-Based High‑κ Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS
1个月前
已完结
The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors
1个月前
已完结
Morphological and electrical properties of SrTiO 3 /TiO 2 /SrTiO 3 sandwich structures prepared by plasma sputtering
1年前
已完结
$\hbox{ZrLaO}_{x}\hbox{/ZrTiO}_{x}\hbox{/ZrLaO}_{x}$ Laminate as Insulator for MIM Capacitors With High Capacitance Density and Low Quadratic Voltage Coefficient Using Canceling Effect
1年前
已完结
Improvement of Voltage Linearity and Leakage Current of MIM Capacitors With Atomic Layer Deposited Ti-Doped ZrO2 Insulators
1年前
已完结
MIM Capacitors With Crystalline-$\hbox{TiO}_{2}/ \hbox{SiO}_{2}$ Stack Featuring High Capacitance Density and Low Voltage Coefficient
1年前
已完结
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