Lv21
166 积分 2022-12-24 加入
Selective etch process for fab-compatible top contacts, replacement oxide, and interlayer removal in 2D FETs
5小时前
已完结
Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS2, WS2, & WSe2
5小时前
已完结
Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching SchottkyMott Limit
5小时前
求助中
High-Performance WSe2 Top-Gate Devices with Strong Spacer Doping
5小时前
已完结
In Situ Defect Engineering of Controllable Carrier Types in WSe2 for Homomaterial Inverters and Self-Powered Photodetectors
5小时前
已完结
The Critical Role of 2D TMD Interfacial Layers for pFET Performance
19小时前
已完结
Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices
19小时前
已完结
Dielectric-assisted transfer using single-crystal antimony oxide for two-dimensional material devices
19小时前
已完结
Low-power 2D gate-all-around logics via epitaxial monolithic 3D integration
19小时前
已完结
Ballistic two-dimensional InSe transistors
19小时前
已完结
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