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80 积分 2025-10-31 加入
Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer
1天前
求助中
Gate-Drain Distance Optimization in Multi-Layer AlGaN High Electron Mobility Transistors: A Finite Element Analysis
1天前
待确认
Nonmonotonic Instability of V TH and R ds,on in 650 V Schottky-Type p-GaN Gate HEMTs Under Short-Circuit: The Effect of Electric Field and Thermal Dynamics
1个月前
已完结
Tailoring amorphous boron nitride for high-performance two-dimensional electronics
1个月前
已完结
Identification of an Oxygen Defect in Hexagonal Boron Nitride
1个月前
已完结
Effect of lateral inhomogeneous AlGaN barrier layer on electronic properties of GaN HEMTs
2个月前
已完结
Plasma atomic layer etching of GaN/AlGaN materials and application: An overview
2个月前
已完结
In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication
2个月前
已完结
Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs
2个月前
已完结
A 650V Enhancement Mode GaN HEMT Device with Field Plate for Power Electronic Applications
2个月前
已完结
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