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120 积分 2025-10-31 加入
Passivating and low damaging plasma etching of GaN using Cl2 and SiCl4 for recessed gate MOSc-HEMT devices
26天前
已完结
Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs
1个月前
已完结
Progress on and challenges of p-type formation for GaN power devices
1个月前
已完结
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
1个月前
已完结
Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications
1个月前
已完结
Transport characteristics of 2DHG in p-GaN/AlGaN/GaN heterojunctions: the impact of Mg dopant activation
1个月前
已完结
Origin of high hole concentrations in Mg‐doped GaN films
1个月前
已完结
Effects of growth conditions on the acceptor activation of Mg-doped p-GaN
1个月前
已完结
Nanometer-Thick Insertion Layer for the Effective Passivation of Surface Traps and Improved Edge Acuity for AlGaN/GaN HEMTs
1个月前
已完结
Atomic Layer Etching of Tantalum with NbCl5 and O2
1个月前
已完结
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