| 标题 |
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs |
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| DOI | |
| 其它 |
期刊:IEEE Transactions on Device and Materials Reliability 作者:Arno Stockman; Eleonora Canato; Matteo Meneghini; Gaudenzio Meneghesso; Peter Moens; Benoit Bakeroot 出版日期:2021-05-15 |
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(2025-6-4)