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Performance enhancement for AlGaN/GaN HEMTs with dual discrete field-plate
1年前
已完结
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
1年前
已完结
Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review
1年前
已完结
Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1−xN heterojunctions
1年前
已关闭
Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs
1年前
已完结
Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone
1年前
已完结
Improved p-GaN/AlGaN/GaN HEMTs with magnetron sputtered AlN cap layer
1年前
已完结
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