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30 积分 2025-04-04 加入
High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications
1个月前
已完结
Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at Vd = 12 V
1个月前
已完结
Realtime observation of “spring fracture” like AlGaN/GaN HEMT failure under bias
1个月前
已完结
Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process
1个月前
已完结
High RF Performance Enhancement-Mode Thin-Barrier AlGaN/GaN HEMTs on Si Substrate for Low-Voltage Applications
2个月前
已完结
High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts
2个月前
已完结
Ti-doped ZnO Nanowires: A Breakthrough in Non-volatile Resistive Memory Application
3个月前
已完结
Material design and mechanism interpretation of metal oxide nanofibers for improving gas sensitivity
5个月前
已完结
Graded Post‐Processing Assisted Heterojunction Interface for High Performance Oxide Transistors
5个月前
已完结
Graded Post‐Processing Assisted Heterojunction Interface for High Performance Oxide Transistors
5个月前
已完结
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