| 标题 |
Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at Vd = 12 V |
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| DOI | |
| 其它 |
期刊:IEEE Electron Device Letters 作者:Jingshu Guo; Jiejie Zhu; Siyu Liu; K. Cheng; Qing Zhu; et al 出版日期:2023-04-01 |
| 求助人 | |
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(2025-6-4)