Lv3
214 积分 2025-12-12 加入
Anomalous interface fixed charge generated by forming gas annealing in SiO2/GaN MOS devices
20小时前
已完结
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD
1天前
已完结
Accurate and Efficient Process Modeling and Inverse Optimization for Trench Metal Oxide Semiconductor Field Effect Transistors: A Machine Learning Proxy Approach
1天前
已完结
A machine learning approach to TCAD model calibration for MOSFET
1天前
已完结
Characteristics Prediction and Optimization of GaN CAVET Using a Novel Physics-Guided Machine Learning Method
1天前
已完结
Inverse Design of High Power and High Voltage LDMOS Transistors Using Deep Learning-Based Sample-Efficient Surrogate Model
1天前
已完结
Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model
1天前
已完结
GaN/SiO2 interface that does not create states within the band gap: A theoretical prediction
10天前
已完结
Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop
1个月前
已完结
Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode
1个月前
已完结
皖公网安备34019202002308
