Lv3
240 积分 2025-12-12 加入
Design and Process Analysis of a Split-Gate Trench Power MOSFET with Bottom-Trench Hk-Pillar Superjunction for Enhanced Performance
1个月前
已完结
Design and TCAD Study of p-GaN Gate HEMT With a Nanowire Structure for Stable VTH and Self-Clamped Gate Leakage
1个月前
已完结
Short-channel effects and TCAD study of hole concentration impact in p-GaN Gate AlGaN/GaN HEMTs
1个月前
已完结
Design and TCAD Study of p-GaN Gate HEMT With a Nanowire Structure for Stable VTH and Self-Clamped Gate Leakage
1个月前
已完结
Analytical modeling of CV and I-V characteristics in p-GaN gate HEMTs based on the unified 2DEG density expression
1个月前
已完结
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution
1个月前
已完结
Impacts of Backside Insulation on the Dynamic On-Resistance of Lateral p-GaN HEMTs-on-Si
1个月前
已完结
High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension
1个月前
已完结
Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor
1个月前
已完结
Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps
1个月前
已完结
皖公网安备34019202002308
