Lv4
728 积分 2024-04-22 加入
第三代半导体从业者
Investigation of Photoluminescence Black Features in 4H‐SiC Substrates
3小时前
已完结
Formation and multiplication of basal plane dislocations during physical vapor transport growth of 4H-SiC crystals
26天前
已完结
Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography
1个月前
已完结
Polyimide-derived graphite barrier layer adhered to seed crystals to improve the quality of grown silicon carbide
1个月前
已完结
Mechanism Reveal of Threading Edge Dislocation Multiplication during the Initial Stage of 4H-SiC Growth
1个月前
已完结
Unlocking different types of basal plane dislocations and its evolution in 4H-SiC
1个月前
已完结
Synchrotron X-ray Topography Studies of Dislocation Behavior During Early Stages of PVT Growth of 4H-SiC Crystals
1个月前
已完结
Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
1个月前
已完结
Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications
1个月前
已完结
Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers
1个月前
已完结
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