Lv5
830 积分 2024-04-22 加入
第三代半导体从业者
Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
6小时前
待确认
Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals
6小时前
已完结
Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules
6小时前
已完结
Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
2个月前
已关闭
Advances in fast 4H–SiC crystal growth and defect reduction by high-temperature gas-source method
2个月前
已完结
Effect of cerium impurity on the stable growth of the 4H-SiC polytype by the physical vapour transport method
3个月前
已完结
Characterization of deep levels in n-type 4H-SiC single crystals by means of a piezoelectric photothermal and a photoluminescence spectroscopy
4个月前
已完结
Deep level centers in silicon carbide: A review
4个月前
已完结
A review on transition metal doped silicon carbide
4个月前
已完结
Study of Effect of Coil Movement on Growth Conditions of SiC Crystal
5个月前
已完结
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