Lv3
390 积分 2024-04-22 加入
第三代半导体从业者
Suppressing Stress and Defect Clustering in 8-inch PVT-Grown 4H-SiC Crystals via High-Temperature Post-Growth Annealing
11天前
已完结
Identification of Lattice Vacancies on the Two Sublattices of SiC
11天前
已完结
(Invited) Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing
11天前
已关闭
(Invited) Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing
11天前
已关闭
Formation and Annihilation of Carbon Vacancies in 4H-SiC
11天前
已完结
Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
11天前
已完结
Formation and Annihilation of Carbon Vacancies in 4H-SiC
12天前
已完结
Multifunctional microscope provides a versatile way to observe soft matter
12天前
已完结
The IoT implementation on the night sky brightness measurement in Banjar using the sky quality meter
1个月前
已完结
Crystallization process and growth mechanism for hexagonal prism of strontium hydroxyapatite by urea hydrolysis
1个月前
已完结