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530 积分 2024-04-22 加入
第三代半导体从业者
Crystallization process and growth mechanism for hexagonal prism of strontium hydroxyapatite by urea hydrolysis
1小时前
待确认
Experimental discrimination of geminate and non-geminate recombination in a-Si:H
1小时前
待确认
PL Signatures from Decoration of Dislocations in SiC Substrates and Epitaxial Wafers
2小时前
待确认
Defect-Induced Luminescence Quenching of 4H-SiC Single Crystal Grown by PVT Method through a Control of Incorporated Impurity Concentration
2小时前
待确认
Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder
2个月前
已完结
Sublimation growth and property characterization of p-type 4H-SiC by Al B co-doping technique
2个月前
已完结
Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport
2个月前
已完结
Optimization of temperature field and crystal growth in the PVT method for high-quality 8-inch silicon carbide single crystal growth
2个月前
已完结
Characterization of Dislocations in 4H-SiC
3个月前
已完结
Identification and Formation Mechanism of Threading Screw Dislocations in 4H-SiC Crystal
3个月前
已完结
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