Lv4
620 积分 2024-04-22 加入
第三代半导体从业者
Optimization of temperature field and crystal growth in the PVT method for high-quality 8-inch silicon carbide single crystal growth
39分钟前
已完结
Characterization of Dislocations in 4H-SiC
1个月前
已完结
Identification and Formation Mechanism of Threading Screw Dislocations in 4H-SiC Crystal
1个月前
已完结
Nitrogen doping and multiplicity of stacking faults in SiC
1个月前
已完结
Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
1个月前
已完结
AFM investigation of interface step structures on PVT-grown (0 0 0 1)Si 6H–SiC crystals
1个月前
已完结
Temperature Dependent Electrical Properties of N-Type 4H-SiC Substrates
1个月前
已完结
Formation of carbon vacancy in 4H silicon carbide during high-temperature processing
3个月前
已完结
Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic Substitution
3个月前
已完结
Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser
3个月前
已关闭
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