Lv3
380 积分 2024-04-22 加入
第三代半导体从业者
Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect
2个月前
已完结
Suppressing Stress and Defect Clustering in 8-inch PVT-Grown 4H-SiC Crystals via High-Temperature Post-Growth Annealing
2个月前
已完结
Identification of Lattice Vacancies on the Two Sublattices of SiC
2个月前
已完结
(Invited) Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing
2个月前
已关闭
(Invited) Controlling the Carbon Vacancy in 4H-SiC By Thermal Processing
2个月前
已关闭
Formation and Annihilation of Carbon Vacancies in 4H-SiC
2个月前
已完结
Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
2个月前
已完结
Formation and Annihilation of Carbon Vacancies in 4H-SiC
2个月前
已完结
Multifunctional microscope provides a versatile way to observe soft matter
2个月前
已完结
The IoT implementation on the night sky brightness measurement in Banjar using the sky quality meter
3个月前
已完结
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