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50 积分 2026-07-16 加入
Influence of Different Hydrocarbons on Chemical Vapor Deposition Growth and Surface Morphological Defects in 4H‐SiC Epitaxial Layers
1个月前
已完结
Surface investigation of the morphological evolution and formation mechanism of nanoscale growth pits in 4H-SiC homoepitaxy
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Surface investigation of the morphological evolution and formation mechanism of nanoscale growth pits in 4H-SiC homoepitaxy
1个月前
已完结
Structure Defects in CVD-Grown Silicon Carbide Epitaxial Wafers: From Fundamental Principles to Advanced Reduction Strategies
1个月前
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Reducing surface pits of thick 4H-SiC epilayers by in-situ post-treatment process
1个月前
已完结