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566 积分 2026-07-17 加入
Quantum Barrier Engineering Enables Carrier Redistribution for High-Efficiency Green InGaN Micro-LEDs at Reduced Operating Current Density
3小时前
已完结
55.5: AMEC MOCVD Solution of Mini/Micro‐LEDs for Advanced Display Applications
12天前
已完结
Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry
16天前
已完结
Weak polarization electric field Ⅲ-N LEDs on polar plane with enhanced efficiency and strong lateral carrier confinement
16天前
已完结
Broadly tunable, narrow-linewidth light from a single GaN-based micro-cavity LED (MCLED)
23天前
已完结
Comparison between Polar (0001) and Semipolar (1122) Nitride Blue–Green Light-Emitting Diodes Grown on c- and m-Plane Sapphire Substrates
1个月前
已完结
Semipolar GaN grown on foreign substrates: a review
1个月前
已完结
Polarity inversion and electronic structure in magnesium-induced GaN inversion domain superlattices
1个月前
已完结
In situ dry repair and passivation unlocks size-independent performance in Ⅲ-nitride micro-LEDs
2个月前
已完结
https://www.sciencedirect.com/science/article/abs/pii/S2213343726037164?via%3Dihub
2个月前
已完结
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