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58 积分 2025-08-18 加入
Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions
29天前
已完结
Impacts of surface C/Si ratio on in-wafer uniformity and defect density of 4H-SiC homo-epitaxial films grown by high-speed wafer rotation vertical CVD
29天前
已完结
SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor
29天前
已完结
High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor
29天前
已完结
Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition
1个月前
已完结
Homoepitaxial growth of 4H-SiC on on-axis (0001) C-face substrates by chemical vapor depositon
1个月前
已完结
Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H Polytype
1个月前
已完结
Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates
1个月前
已完结
On-axis homoepitaxial growth on Si-face 4H SiC substrates
1个月前
已完结
Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates
1个月前
已完结
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