Lv52
1150 积分 2024-11-02 加入
Terahertz surface emission ofd-band electrons from a layered tungsten disulfide crystal by the surface field
1个月前
已完结
High Voltage Vertical Ga2O3 JBS Diode with Fluorine Ion Implanted Edge Termination
1个月前
已完结
Oxygen vacancy control engineering in Ga2O3/4H-SiC Schottky rectifiers
4个月前
已完结
Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications
4个月前
已完结
Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence
4个月前
已完结
Investigation of lithium (Li) doping on the resistive switching property of p-Li:NiO/n-β-Ga2O3 thin-film based heterojunction devices
5个月前
已完结
High performance low power multilevel oxide based RRAM devices based on TiOxNy/Ga2O3 hybrid structure
5个月前
已完结
Atomic layer deposition and characterization of Zn-doped Ga2O3 films
5个月前
已完结
Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure
5个月前
已完结
皖公网安备34019202002308
