Lv7
3380 积分 2023-11-19 加入
Selective epitaxial Si/SiGe growth forVTshift adjustment in highkpMOS devices
6天前
已完结
Threshold shift of p-channel transistors by boron implantation and the C-V characteristics of the corresponding mos structures
19天前
已完结
SiGe channels for VT control of high-k metal gate transistors for 32nm complementary metal oxide semiconductor technology and beyond
1个月前
已完结
Selective Epitaxial Si/SiGe for V>inf<T>/inf<Shift Adjustment in High k pMOS Devices
1个月前
已完结
Intermixing reduction in ultra-thin titanium nitride/hafnium oxide film stacks grown on oxygen-inserted silicon and associated reduction of the interface charge dipole
1个月前
已完结
A 2D analytical model for SCEs in MOSFETs with high-kgate dielectric
1个月前
已完结
Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors
3个月前
已完结
Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
3个月前
已完结
Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors
3个月前
已完结
Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
4个月前
已关闭
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