Lv2
130 积分 2026-01-31 加入
Simulation Study of Single-Event Burnout in GaN MISFET With Schottky Element
1个月前
已完结
Study on Differences in Single-Event Leakage Current of Planar-Gate and Asymmetric Trench-Gate SiC MOSFETs
3个月前
已完结
Review of displacement damage effects in silicon devices
3个月前
已完结
Review of Radiation Effects in Semiconductors: Displacement Defect, Total Ionizing Dose, and Single Event Effects
3个月前
已完结
Research on the Reliability of GaN-Based Power Electronic Devices for Space Applications
3个月前
已完结
Analysis of the influence of single event effects on the characteristics for SiC power MOSFETs
3个月前
已完结
Comparative Study of Single-Event Effect Tolerance Between Planar and Trench SiC Power MOSFETs
3个月前
已完结
Heavy-Ion Radiation Effects in AlGaN/GaN High-Electron-Mobility Transistors
3个月前
已完结
Structural Analysis of Power Devices and Assemblies by Thermal Transient Measurements
4个月前
已完结
Flexible PCB-Based 3-D Integrated SiC Half-Bridge Power Module With Three-Sided Cooling Using Ultralow Inductive Hybrid Packaging Structure
4个月前
已完结
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