Lv5
920 积分 2025-12-29 加入
First-Principles Study of Oxygen Vacancy Defects in Amorphous HfO2/Si Interfaces
1个月前
已完结
Electrical Properties of Schottky Devices from HfO2 and ZnO/HfO2 Thin Films: Morphological, Structural, and Optical Investigations
1个月前
已完结
P‐7.23: Al 2 O 3 ‐HfO 2 Composite Dielectric Layer for Thin‐film Transistors with High Bias Stability
1个月前
已完结
Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
1个月前
已完结
Enhanced Performance and Gate Bias Stress Stability of Atomic-Layer-Deposited Amorphous Zn–Sn–O Thin-Film Transistors with HfO2 and Al-Doped TiO2 Interlayers on SiO2 Gate Oxide
1个月前
已完结
Simulation and Analysis of GaAs‐Au Layer‐HfO2 Dual‐Band Photodetector with High Performance in Visible Spectral Region
1个月前
已完结
Photodiode characteristics of HfO2 thin films prepared by magnetron sputtering
1个月前
已完结
Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics
1个月前
已完结
Effect of Bias Voltage on Substrate for the Structure and Electrical Properties of Y:HfO2 Thin Films Deposited by Reactive Magnetron Co‐Sputtering
1个月前
已完结
Interfacial variation in HfO2-based resistive switching devices with titanium electrodes under asymmetric bias operation
1个月前
已完结
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