Lv51
880 积分 2025-12-29 加入
Comparative study of defect energetics in HfO₂ and SiO₂
3天前
已完结
2D fin field-effect transistors integrated with epitaxial high-k gate oxide
1个月前
已完结
Performance and reliability potential of Bi_2O_2Se/Bi_2SeO_5 transistors
1个月前
已关闭
Wafer-scale ultrathin and uniform van der Waals ferroelectric oxide
1个月前
已完结
Theoretical study of the insulator/insulator interface: Band alignment at the Si O 2 ∕ Hf O 2 junction
1个月前
已完结
A computational framework for neural network-based variational Monte Carlo with Forward Laplacian
5个月前
已完结
The degradation process of high-k SiO2/HfO2 gate-stacks: a combined experimental and first principles investigation
5个月前
已完结
皖公网安备34019202002308
