Lv1
71 积分 2020-09-05 加入
Stacking fault analysis for the early-stages of PVT growth of 4H-SiC crystals
2个月前
已完结
Induction frequency modulation for 4H-SiC growth: Thermal field evolution, dislocation suppression, and high-quality crystal preparation via PVT method
3个月前
已完结
Unlocking different types of basal plane dislocations and its evolution in 4H-SiC
3个月前
已完结
Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
3个月前
已完结
Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals
5个月前
已完结
Impact of crystal orientation on laser scribing and cleaving of 4H-SiC
6个月前
已完结
Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals
6个月前
已完结
Role of entropy in silicon carbide polytype competition
6个月前
已完结
Identification and Formation Mechanism of Threading Screw Dislocations in 4H-SiC Crystal
6个月前
已完结
Growth of SiC by PVT method in the presence of cerium dopant
9个月前
已完结
皖公网安备34019202002308
