Lv1
50 积分 2025-06-27 加入
Real-Time Degradation Level Assessment of IGBT Gate Oxide Layer Using Turn-Off Delay Time
14天前
已完结
Analysis of Influence Parameters of Stress Wave at the Turn-Off Moment in IGBT Device Based on Differential AE Sensor
14天前
已完结
Turn-Off Delay Compensation of Series-Connected IGBTs for HVDC Applications
15天前
已完结
Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs
2个月前
已完结
A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance
2个月前
已完结
Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate
2个月前
已完结
Research of A 4H-SiC MOSFET with Thick Oxide Layer and Split Gate Structure
3个月前
已完结
GaN Vertical MOSFETs With Monolithically Integrated Freewheeling Merged pn-Schottky Diodes (MPS-MOS) for 1.2-kV Applications
3个月前
已完结
1500 V GaN-on-Si Vertical Power MOSFETs: From Quasi-Vertical to Fully-Vertical Topology
3个月前
已完结
1200 V Fully-Vertical GaN-on-Si Power MOSFETs
3个月前
已完结
皖公网安备34019202002308
