Lv5
1580 积分 2024-03-26 加入
TCAD simulation of organic field-effect transistors based on spray-coated small molecule organic semiconductor with an insulating polymer blend
10个月前
已完结
Broadband Noise Characterization of SiGe HBTs Down to 4K
11个月前
已完结
Recent progress in bipolar and heterojunction bipolar transistors on SOI
11个月前
已完结
Effects of the Total Ionizing Dose on the Single Event Transient Sensitivity of SiGe HBT Exposed to Heavy-Ion Beam
11个月前
已完结
Comparison of Single-Event Transient Under Heavy Ion and Pulsed Laser Irradiation in SiGe HBT Ultrawideband LNA
11个月前
已完结
Coupled radiation effects of swift heavy ions and strong electromagnetic pulses on a SiGe HBT: A TCAD-based simulation
11个月前
已关闭
Application of Device-Degradation Modeling to SiGe-LNA Analysis
11个月前
已完结
Integration of Lateral Si/SiGe HBTs on Advanced FD-SOI Technology: Process Development and Challenges
11个月前
已完结
TCAD simulation methodology of total ionizing dose effects for PDSOI transistor with a hump characteristic
11个月前
已关闭
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