Lv6
1820 积分 2021-06-08 加入
Polarization-Enhanced GaN Schottky Barrier Diodes: Ultra-Thin InGaN for High Breakdown Voltage and Low Ron
16天前
已完结
p-NiO junction termination extensions for GaN power devices
16天前
已完结
Over 6 MV/cm operation in β-Ga2O3 Schottky barrier diodes with IrO2 and RuO2 anodes deposited by molecular beam epitaxy
16天前
已完结
Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to β-Ga2O3 by removing surface carbon
16天前
已完结
Chasing Schottky–Mott: Metal-first non-alloyed contacts to β-Ga2O3 for interface quality and minimal surface modification
16天前
已完结
Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga2O3 Schottky diodes
16天前
已完结
Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes
17天前
已完结
Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode
17天前
已完结
Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2
17天前
已完结
Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage
17天前
已完结
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