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40 积分 2025-10-16 加入
Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films
2天前
已完结
Laser-MBE Improving growth of β-Ga2O3 films by introducing a Homo-Amorphous nucleation seed layer for solar-blind deep UV photodetector applications
2天前
已完结
MOCVD growth of β-Ga2O3 with fast growth rates (>4.3 μm/h), low controllable doping, and superior transport properties
1个月前
已完结
Depletion-mode vertical Ga2O3trench MOSFETs fabricated using Ga2O3homoepitaxial films grown by halide vapor phase epitaxy
1个月前
已完结
E-Mode Vertical β-Ga2O3 (010) U-Trench MOSFETs with In-Situ Mg-Doped Current Blocking Layers
1个月前
已完结
Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication
1个月前
已完结
Step flow growth of β-Ga2O3 films on off-axis 4H-SiC substrates by LPCVD
1个月前
已完结
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
1个月前
已完结
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