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126 积分 2025-10-16 加入
Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates
13小时前
待确认
Fully-isolated silicon RF LDMOS for high-efficiency mobile power conversion and RF amplification
3天前
已完结
Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors
4天前
已完结
Exploring the submillimeter wave potential: DC and AC characterization of quaternary AlInGaN-based T-gate MOSHEMT on ultrawide-bandgap β-Ga2O3 substrate
4天前
已完结
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current
4天前
已完结
$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
4天前
已完结
Delay-time analysis in radio-frequency β -Ga2O3 field effect transistors
4天前
已完结
Comparative study of planar-gate and T-gate GaN HEMTs with gate length scaling
4天前
已完结
Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
4天前
已完结
Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency
4天前
已完结
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