Lv11
70 积分 2025-02-26 加入
Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric
9小时前
待确认
Correlation between structure and properties of Er2O3 nanocrystalline thin films
3个月前
已完结
Comprehensive investigation of Er2O3 thin films grown with different ALD approaches
7个月前
已完结
Post Annealing Effects on Er2O3 Nanowire Arrays for Improved Photodetection
7个月前
已完结
A Monolayer MoS2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High‐κ Er2O3 Insulator Through Thermal Evaporation
8个月前
已完结
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