Lv4
486 积分 2025-12-08 加入
An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors
15小时前
待确认
An approach for extracting the SiC/SiO2 SiC MOSFET interface trap distribution and study during short circuit
15小时前
已完结
A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs
7天前
已完结
Multiscale modeling of defect-related phenomena in high-k based logic and memory devices
7天前
已完结
Prediction of single event effects in SiC MOSFET devices based on deep learning
7天前
已关闭
An interface trap density evaluation method for SiC MOSFET based on neural network
7天前
已完结
Design and Optimization of SiC Super-Junction MOSFET Using Vertical Variation Doping Profile
1个月前
已完结
Performance Limit and Design Guideline of 4H-SiC Superjunction Devices Considering Anisotropy of Impact Ionization
1个月前
已完结
A novel SiC super-junction MOSFET with step-doping profile and split dummy gate for enhanced switching and short-circuit performance
2个月前
已完结
An Ultrahigh-Voltage SiC Superjunction MOSFET with Split Dummy Gate for Improving Switching and Short-Circuit Capability
2个月前
已完结
皖公网安备34019202002308
