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The effect of the intrinsic layer on the reliability of nitride-based p–i–n photodetectors
8小时前
已完结
ESD Sensitivity of GaN-Based Electronic Devices
8小时前
求助中
High-temperature high-humidity and electrical static discharge stress effects on GaN p–i–n UV sensor
9小时前
已完结
ESD design of radiation-hardened for UV AlGaN focal plane arrays readout circuit
13小时前
已完结