| 标题 |
Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:JunShuai Xue; Yue Hao; JinCheng Zhang; XiaoWei Zhou; ZiYang Liu; et al 出版日期:2011-03-18 |
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(2025-6-4)