Lv3
230 积分 2025-07-27 加入
TCAD analysis of gate leakage and threshold drift in GaN devices with dual-gate structure
11天前
已完结
Theoretical investigations on the confinement properties of InAlN/AlN/GaN heterostructures with InGaN/GaN multi-quantum wells back-barrier
1个月前
已关闭
AlGaN-based Avalanche Photodiodes with a Graded Al Composition Multiplication Layer
1个月前
已完结
Characteristics of gallium oxide nMOSFET inverter
2个月前
已完结
Enhancing breakdown voltage of AlGaN/GaN HEMTs by lateral buffer trap modulation
3个月前
已完结
Design and characterization of 2-GaN MIS-HEMT integrated cascode power module
3个月前
已关闭
Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit
3个月前
已完结
Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit
3个月前
已完结
DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate
3个月前
已完结
A novel design of hysteretic comparator circuit towards GaN-based power IC
4个月前
已完结
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