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10 积分 2025-09-30 加入
High-temperature stability of Hf0.5Zr0.5O2-based ferroelectric memory devices
1小时前
待确认
Working Principles and Performance Optimization of Nonvolatile 6T2C-SRAM With Hafnia-Based Ferroelectric Capacitors
1小时前
已完结
Fatigue of NbO$_{\textit{x}}$-Based Locally Active Memristors—Part II: Mechanisms and Modeling
2小时前
已完结
应用于FeRAM设计的铁电电容宏模型
2小时前
已完结
3D Trench Hf0.5Zr0.5O2-Based 32 Kbit 1T1C FeRAM Chip with 2/5 ns Write/Read Speed, Low Power Consumption (0.605 pJ/bit) and Prominent High-Temperature Reliability (Baking @ 175°C)
4小时前
已完结
Comprehensive Analysis of Duty-Cycle Induced Degradations in HfxZr1-xO2-Based Ferroelectric Capacitors: Behavior, Modeling, and Optimization
4小时前
已完结
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