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2024-12-19 加入
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High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer
1个月前
已完结
High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer
1个月前
已关闭
InAlN cladding implementation in green superluminescent diodes and lasers
1个月前
已完结
Research on zinc diffusion in undoped InP
1个月前
已完结
Group-III nitride heteroepitaxial films approaching bulk-class quality
1个月前
已完结
InAlN cladding implementation in green superluminescent diodes and lasers
1个月前
已关闭
High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer
1个月前
已关闭
Toward all-MOCVD grown InAs/GaAs quantum dot laser diode on a Si substrate for O-band telecommunication
1个月前
已完结
III–V Semiconductor Whispering-Gallery Mode Micro-Cavity Lasers: Advances and Prospects
4个月前
已完结
Remote Epitaxy: Fundamentals, Challenges, and Opportunities
4个月前
已完结
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