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624 积分
2024-09-20 加入
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Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology
2个月前
已完结
Thickness dependent phase transformation and resistive switching performance of HfO2 thin films
2个月前
已完结
Nitrogen-induced filament confinement strategy for implementing reliable resistive switching performance in a-HfOx memristors
3个月前
已完结
Analyzing switching variability of SiNx-based RRAM in terms of Joule heating dissipation
4个月前
已完结
High-Resistance State Reduction During Initial Cycles of AlOxNy-Based RRAM
5个月前
已关闭
Facilitation of compliance current for resistive switching and stability of Ta/BaTiO<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/ITO
5个月前
已完结
A 28nm 4Mb Embedded RRAM IP with Record-High Endurance of 107 Cycles and 10 Years@125°C Retention through Reliability-Enhanced Design-Technology Co-Optimization
6个月前
已完结
A RRAM that endures
6个月前
已完结
Optimizing RRAM Performance: A Comparative Analysis of Forming Strategies
7个月前
已完结
The effect of bulk conversion into surface on physical properties of HfO2: First principle study
8个月前
已完结
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