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40 积分 2026-04-17 加入
A comparative study of Schottky barrier heights and charge transport mechanisms in 3C, 4H, and 6H silicon carbide polytypes
23小时前
已完结
Post-deposition annealing-driven interface engineering in sputtered AlN films on 4H-SiC substrate for enhanced electrical performance
2天前
已完结
Evaluation of body-diode degradation in 4H-SiC VMOSFETs under high-current-density stress
1个月前
已完结
Integrated Thermal Management for a High-Power-Density Silicon Carbide Power Module With Die-Level Heat Flux Over 1000 W/cm²
3个月前
已完结
Formation mechanism of graphite or graphene fibers with core-shell structure from nearly stoichiometric polycrystalline SiC fibers
3个月前
已完结
Growth and defect formation mechanism of CVD-prepared SiC coatings based on cross-scale simulation
3个月前
已完结
Development of a Novel Warpage Control Method for Epi-Ready 4H-SiC Wafers by Depositing Homoepitaxial Layers on both Si- and C-Faces
3个月前
已完结
Preparation of SiC composite coatings on graphite spheres by two-step method of pack cementation and precursor infiltration and pyrolysis
3个月前
已完结
Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications
4个月前
已完结
Surface flattening of 4H-SiC (0001) epitaxial wafers by high temperature oxidation
5个月前
已完结
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