Lv5
1588 积分 2025-06-24 加入
Scaling aligned carbon nanotube transistors to a sub-10 nm node
16天前
已完结
Ballistic two-dimensional InSe transistors
16天前
已完结
Room Temperature Negative Differential Resistance in Gate-All-Around Field-Effect Transistors With 1D Active Channels
25天前
已完结
Realizing Boltzmann Switching Limit in Carbon Nanotube Transistors through Combating Intertube Electrostatic Coupling
4个月前
已完结
High-Performance Dual-Gate Transistors Based on Aligned Carbon Nanotubes
7个月前
已完结
Two-dimensional indium selenide wafers for integrated electronics
8个月前
已完结
Resonant Tunneling between Quantized Subbands in van der Waals Double Quantum Well Structure Based on Few-Layer WSe2
8个月前
已完结
皖公网安备34019202002308
