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A novel p-GaN HEMT with superjunction silicon substrate for improved current collapse
53分钟前
待确认
Recorded 1.4 kV/1.24 GW/cm2 BFOM AlGaN/GaN Schottky barrier diodes grown on Si substrate with fan-shaped AlGaN polarization superjunction
23天前
已完结
Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact
29天前
已关闭
GaN HEMT/Si MOSFET Hybrid Switch with Suppressed Dynamic ON-Resistance and Enhanced Avalanche Robustness
1个月前
已完结
Charge Balance Design of 1200-V E-Mode p-GaN Gate HEMT Toward Enhanced Breakdown Voltage and Dynamic Stability
1个月前
已完结
Charge Balance Design of 1200-V E-Mode p-GaN Gate HEMT Toward Enhanced Breakdown Voltage and Dynamic Stability
1个月前
已完结
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
1个月前
已完结
Power Semiconductor Devices for Smart Grid and Renewable Energy Systems
1个月前
已完结
Low leakage fully-vertical GaN-on-Si power MOSFETs
2个月前
已完结
Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV
2个月前
已完结
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