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Lv1
10 积分
2023-11-23 加入
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7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management
8天前
已完结
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
8天前
已完结
2 kV slanted tri-gate GaN-on-Si Schottky barrier diodes with ultra-low leakage current
9天前
已完结
Observation of inductively coupled-plasma-induced damage on n-type GaN using deep-level transient spectroscopy
13天前
已完结
Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs
13天前
已完结
Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)
22天前
已完结
Residual impurities in GaN substrates and epitaxial layers grown by various techniques
22天前
已完结
Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronics applications: A comprehensive review
26天前
已完结
Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV
1个月前
已完结
Mechanism of current-collapse free for lateral GaN Schottky barrier diodes utilizing polarization-induced hole injection
1个月前
已完结
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