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Synthesis of Wafer‐Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications
8小时前
待确认
MOS-structured MoS2/GaN Schottky barrier diodes with high on/off current ratio and low threshold voltage
2个月前
已完结
Comparison of performance in GaN-HEMTs on thin SiC substrate and Sapphire substrates
2个月前
已完结
Vertical GaN devices: Process and reliability
2个月前
已完结
Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering
2个月前
已完结
High performance InGaN double channel high electron mobility transistors with strong coupling effect between the channels
4个月前
已完结
Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes
4个月前
已完结
Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV
4个月前
已完结
Lateral polarity controlled quasi-vertical GaN Schottky barrier diode with sidewalls absence of plasma damages
4个月前
已完结
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface
4个月前
已完结
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