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170 积分 2022-09-16 加入
Integrated Fast-Recovery SGT-SBR Devices with Majority Carrier Modulation During Wide Temperature Range
49分钟前
待确认
Design of trench termination for high voltage devices
4个月前
已关闭
Electron gate currents and threshold stability in the n-channel stacked gate MOS tetrode
7个月前
已完结
Fabrication of a 650V Superjunction MOSFET With Built-in MOS-Channel Diode for Fast Reverse Recovery
1年前
已完结
The Design of a 4H-SiC SGT MOSFET
1年前
已完结
The Design of a 4H-SiC SGT MOSFET
1年前
已完结
The Design of a 4H-SiC SGT MOSFET
1年前
已完结
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