Lv2
170 积分 2022-09-16 加入
Integrated Fast-Recovery SGT-SBR Devices with Majority Carrier Modulation During Wide Temperature Range
2个月前
已完结
Design of trench termination for high voltage devices
7个月前
已关闭
Electron gate currents and threshold stability in the n-channel stacked gate MOS tetrode
9个月前
已完结
Fabrication of a 650V Superjunction MOSFET With Built-in MOS-Channel Diode for Fast Reverse Recovery
1年前
已完结
The Design of a 4H-SiC SGT MOSFET
1年前
已完结
The Design of a 4H-SiC SGT MOSFET
1年前
已完结
The Design of a 4H-SiC SGT MOSFET
1年前
已完结
皖公网安备34019202002308
